Method and system of surface topography measurement for lithography

ABSTRACT

A method includes providing a workpiece to a semiconductor apparatus, the workpiece including a material layer including a first strip having: a first plurality of exposure fields; and a second plurality of exposure fields alternatingly arranged with the first plurality of exposure fields. The method further includes: scanning the first strip along a first scan route from a first side of the workpiece to a second side of the workpiece to generate first topography measurement data; scanning the first strip along a second scan route from the second side to the first side to generate second topography measurement data; and exposing the first plurality of exposure fields and exposing the second plurality of exposure fields according to the first topography measurement data and the second topography measurement data.

PRIORITY CLAIM AND CROSS-REFERENCE

This application is a continuation application of U.S. non-provisionalapplication Ser. No. 18/051,016 filed Oct. 31, 2022, which is acontinuation application of U.S. non-provisional application Ser. No.17/400,666 filed Aug. 12, 2021, now U.S. Pat. No. 11,487,210 B1, thedisclosures of which are hereby incorporated by reference in theirentirety.

BACKGROUND

The manufacturing of semiconductor integrated circuits with increaseddevice densities is becoming increasingly complicated. Among the varioussemiconductor processing steps for manufacturing the integratedcircuits, a patterning process is widely employed to cause components ofthe integrated circuits to be formed with desired shapes. Typicalpatterning processes include a lithography process, which includescoating a photoresist over a material layer that is to be patterned,exposing the photoresist to a patterning light through a lithographymask, and developing the photoresist to form desired patterns. Thecircuit pattern may be transferred to the material layer through anetching process with the patterned photoresist serving as an etch mask.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a schematic block diagram of a lithography apparatus inaccordance with some embodiments of the present disclosure.

FIG. 2A is an enlarged perspective view of a portion of the lithographyapparatus shown in FIG. 1 , in accordance with some embodiments of thepresent disclosure.

FIG. 2B is a schematic timeline of processing steps in a lithographyoperation, in accordance with some embodiments of the presentdisclosure.

FIGS. 3A and 3B show an elevation view and a top view, respectively, ofa level sensor device in a first scan mode of a surface topographymeasurement operation, in accordance with some embodiments of thepresent disclosure.

FIG. 3C shows matrices of surface topography measurement data, inaccordance with some embodiments of the present disclosure.

FIGS. 3D and 3E show an elevation view and a top view, respectively, ofa level sensor device in a second scan mode of a surface topographymeasurement operation, in accordance with some embodiments of thepresent disclosure.

FIGS. 4A and 4B show an elevation view and a top view, respectively, ofa workpiece in an exposure operation, in accordance with someembodiments of the present disclosure.

FIG. 5 is a schematic diagram of shadow zones of a workpiece, inaccordance with some embodiments of the present disclosure.

FIGS. 6A and 6B show elevation views of a level sensor device in a thirdscan mode of a surface topography measurement operation, in accordancewith some embodiments of the present disclosure.

FIG. 6C shows a top view of the level sensor device in the third scanmode of the surface topography measurement operation, in accordance withsome embodiments of the present disclosure.

FIGS. 6D and 6E show elevation views of a level sensor device in afourth scan mode of a surface topography measurement operation, inaccordance with some embodiments of the present disclosure.

FIG. 6F shows a top view of the level sensor device in the fourth scanmode of the surface topography measurement operation, in accordance withsome embodiments of the present disclosure.

FIG. 7 shows a flowchart of a lithography method, in accordance withsome embodiments of the present disclosure.

FIG. 8 shows a flowchart of a lithography method, in accordance withsome embodiments of the present disclosure.

FIG. 9 is a schematic diagram of a system implementing a lithographymethod, in accordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Notwithstanding that the numerical ranges and parameters setting forththe broad scope of the disclosure are approximations, the numericalvalues set forth in the specific examples are reported as precisely aspossible. Any numerical value, however, inherently contains certainerrors necessarily resulting from the deviation normally found in therespective testing measurements. Also, as used herein, the terms“about,” “substantial” or “substantially” generally mean within 10%, 5%,1% or 0.5% of a given value or range. Alternatively, the terms “about,”“substantial” or “substantially” mean within an acceptable standarderror of the mean when considered by one of ordinary skill in the art.Other than in the operating/working examples, or unless otherwiseexpressly specified, all of the numerical ranges, amounts, values andpercentages, such as those for quantities of materials, durations oftimes, temperatures, operating conditions, ratios of amounts, and thelikes thereof disclosed herein, should be understood as modified in allinstances by the terms “about,” “substantial” or “substantially.”Accordingly, unless indicated to the contrary, the numerical parametersset forth in the present disclosure and attached claims areapproximations that can vary as desired. At the very least, eachnumerical parameter should at least be construed in light of the numberof reported significant digits and by applying ordinary roundingtechniques. Ranges can be expressed herein as being from one endpoint toanother endpoint or between two endpoints. All ranges disclosed hereinare inclusive of the endpoints, unless specified otherwise.

The terms “couple,” “coupled” and “coupling” used throughout the presentdisclosure describe the direct or indirect connections between two ormore devices or elements. In some cases, a coupling between at least twodevices or elements refers to mere electrical or conductive connectionsbetween them and intervening features may be present between the coupleddevices and elements. In some other cases, a coupling between at leasttwo devices or elements may involve physical contact and/or electricalconnections.

The present disclosure relates generally to a lithography system and alithography method, and particularly to measurements of a surfacetopography of a workpiece to be exposed in a lithography operation. Thesurface topography measurement provides essential parameters of thelithography operation, such as a thickness profile, a tilt angle profileor the like, for each of the exposure fields (or simply “fields” forbrevity) of the workpiece to be exposed. However, existing topographymeasurement methods may not provide adequate scanning speed and accuracyfor an advanced technology node. As such, an enhanced level sensordevice structure with revised scanning approaches is proposed in thepresent disclosure for concurrently scanning surfaces of differentfields of the workpiece. In addition, scanning angles and scanningroutes of the level sensors are arranged such that topographymeasurement bias can be effectively reduced. Exposure performance can beimproved accordingly.

FIG. 1 is a schematic block diagram of a lithography apparatus accordingto some embodiments of the present disclosure. The lithography apparatus100 includes a radiation source 110, an illuminator 120, a reticle stage130, a projection module 140, a first wafer stage 150 and a second waferstage 160. FIG. 1 illustrates a transmissive-type lithography apparatus100 according to some embodiments of the present disclosure, but thedisclosure is not limited thereto. Other types of lithography apparatus,such as a reflective-type lithography apparatus, may also be within thecontemplated scope of the present disclosure.

In some embodiments, the radiation source 110 is configured to emit aradiation beam Ra for the lithography operation. The radiation source110 may be an excimer laser or a mercury lamp. In an embodiment, theradiation beam Ra has a wavelength between about 100 nm and about 300nm, or between about 1 nm and about 100 nm, such as 13.5 nm. Theradiation source 110 may be integrated in the lithography apparatus 100or may be formed as a single entity separate from the lithographyapparatus 100.

The illuminator 120 is disposed below the radiation source 110 andreceives the radiation beam Ra from the radiation source 110. In anembodiment, a beam delivery module 102, which may include beam directingmirrors, is disposed between the radiation source 110 and theilluminator 120 and is configured to direct the radiation beam Ra to theilluminator 120. The illuminator 120 may include a cascade of opticalelements for conditioning the incident radiation beam Ra as desired. Forexample, the illuminator 120 includes a conditioning module 104, auniformity control module 106 and a condenser 108.

The conditioning module 104 is configured to adjust the angularintensity distribution of the radiation beam Ra, e.g., the outer and/orinner radial extent of the intensity distribution in a pupil plane ofthe illuminator 120. The conditioning module 104 may include, e.g., acollimator, a field defining element and a field lens group arranged insequence. In an embodiment, the collimator is used to collimate theradiation beam Ra. In an embodiment, the field defining element isconfigured to form the radiation beam Ra into a field shape. In anembodiment, the field lens group focuses the radiation beam Ra onto afield plane.

In an embodiment, the uniformity control module 106 receives theradiation beam Ra in the field shape and is configured to manage theintensity profile of the radiation beam Ra. In an embodiment, theuniformity control module 106 includes an array of movable slit fingersto selectively adjust the intensity levels in different locations of theradiation beam Ra. In some embodiments, the condenser 108 is configuredto focus the radiation beam Ra onto another field plane.

In an embodiment, the illuminator 120 further includes a masking module(not shown in FIG. 1 ) between the uniformity control module 106 and thecondenser 108. The masking module is configured to ensure that, duringexposure of a targeted field, the radiation beam Ra does not leak andilluminate adjacent fields. In an embodiment, the masking module isformed of blades moveable in the scanning direction of the lithographyapparatus 100 and configured to control an opening through which theradiation beam Ra can pass.

The reticle stage 130 is disposed below the illuminator 120 andconfigured to support and secure a reticle 112, also referred to hereinas a mask or a photomask. The radiation beam Ra travels through thecondenser 108 of the illuminator 120 for illuminating the reticle 112 tothereby form a patterned radiation beam Ra and transfer a circuitpattern to the workpiece 122 according to patterns of the reticle 112.

The projection module 140 is disposed under the reticle stage 130 and isconfigured to transfer the circuit pattern toward a workpiece 122 on thefirst wafer stage 150. The projection module 140 may be constructed ofone or more mirrors or lenses to project the patterned radiation beam Raonto the workpiece 122. In an embodiment, the workpiece 122 is asemiconductor substrate and may include a suitable photosensitivematerial formed thereon. In some embodiments, the workpiece 122 isprovided in a form of a semiconductor wafer.

Although the lithography apparatus 100 shown in FIG. 1 includes only theilluminator 120 between the radiation source 110 and the reticle stage130, other configurations are possible. For example, in areflective-type lithography apparatus, one or more mirrors may bealternatively or additionally disposed in the propagation path of theradiation beam Ra between the radiation source 110 and the reticle stage130, either before or after the illuminator 120.

In some embodiments, the lithography apparatus 100 includes a dual-stagedesign, i.e., including the first wafer stage 150 and the second waferstage 160, for performing the lithography operation. In someembodiments, both of the first wafer stage 150 and the second waferstage 160 are allowed to move between an exposure site Se and ameasurement site Sm of the lithography apparatus 100. When the firstwafer stage 150 or the second wafer stage 160 is moved to the exposuresite Se, the workpiece 122 carried by the first wafer stage 150 or aworkpiece 124 carried by the second wafer stage 160 is moved to alignwith the projection module 140 for receiving the patterned radiationbeam Ra in an exposure operation. In some embodiments, the lithographyapparatus 100 includes a level sensor device 152 and/or an alignmentsensor 154 at the measurement site Sm. When the first wafer stage 150 orthe second wafer stage 160 is moved to the measurement site Sm, theworkpiece 122 carried by the first wafer stage 150 or the workpiece 124carried by the second wafer stage 160 is subject to one or morepreparatory steps, e.g., a surface topography measurement operation oran alignment operation, prior to the exposure operation.

In the depicted embodiment, the first wafer stage 150 is positioned atthe exposure site Se, where the workpiece 122 is aligned with theprojection module 140 and readied for receiving the patterned radiationbeam Ra in the exposure operation. The second wafer stage 160 ispositioned at the measurement site Sm, at which the workpiece 124 issubject to a surface topography measurement operation and an alignmentoperation. In some embodiments, after the exposure operation on theworkpiece 122 is completed, the first wafer stage 150 and the secondwafer stage 160 are swapped, and the workpiece 122 is removed from thefirst wafer stage 150 or the lithography apparatus 100, while the secondwafer stage 160 with the workpiece 124 is configured to receive a nextexposure operation.

In an embodiment, the lithography apparatus 100 includes a locationsensor 128 configured to monitor positions of the first wafer stage 150or the second wafer stage 160. The location sensor 128 may aid inaligning the workpiece 122 or 124 with either the projection module 140or the level sensor device 152 by providing accurate position data ofthe wafer stage 150 or 160. In an embodiment, the location sensor 128may include an interferometric device, a linear encoder, a capacitivesensor or the like.

In some embodiments, the lithography apparatus 100 further includespositioning devices for performing alignment between the workpiece 122and the reticle 112 so as to transfer the circuit patterns topredetermined positions of the workpiece 122 or 124 with high accuracy.In the present embodiment, a first positioning device 132 is coupled tothe reticle stage 130 and configured to move the reticle stage 130 suchthat the radiation beam Ra can precisely align the reticle 112 in aninitialization step or a moving step during an exposure operation. Insome embodiments, the reticle 112 includes alignment marks formedthereon for facilitating alignment with the workpiece 122 or 124.

Similarly, the lithography apparatus 100 further includes a secondpositioning device 172 coupled to the first wafer stage 150 andconfigured to align the workpiece 122 with the reticle 112. In someembodiments, the workpiece 122 includes an array of exposure fields andincludes alignment marks on the sides of the array of exposure fields.The reticle 112 may be aligned with the workpiece 122 by an operation ofthe second positioning device 172 that causes the alignment marks on thereticle 112 to overlap the corresponding alignment marks on theworkpiece 122.

The second positioning device 172 may also be coupled to the secondwafer stage 160 and configured to align the workpiece 124 with the levelsensor device 152 and the alignment sensor 154. In some embodiments, theworkpiece 124 includes an array of exposure fields and includesalignment marks on the sides of the array of exposure fields. Thelocation or orientation of the workpiece 124 may be adjusted through anoperation of the positioning device 172 that causes the alignment markson the workpiece 124 to overlap the alignment sensor 154.

In some embodiments, the lithography apparatus 100 further includes acontrol device 114 for controlling the sensing, alignment, and exposureoperations. The control device 114 may include a processor configured toreceive and analyze data generated during the sensing or positioningoperations provided by the location sensor 128, the level sensor device152 or the alignment sensor 154. In some embodiments, the control device114 may include one or more actuators configured to control operationsof the positioning devices 132 and 172. In some embodiments, the controldevice 114 may include one or more actuators configured to controloperations of the radiation source 110, the illuminator 120, the reticlestage 130, the projection module 140, the first wafer stage 150 and thesecond wafer stage 160. The control device 114 may be implemented byhardware, software, firmware, a combination thereof, or the like, andmay include a general-purpose computer, an application specificintegrated chip (ASIC), a field programmable gate array (FPGA), adigital signal processor (DSP), a microcontroller, or the like.

FIG. 2A is an enlarged perspective view of a portion of the lithographyapparatus 100 shown in FIG. 1 , in accordance with some embodiments ofthe present disclosure. As shown in FIG. 2A, only some features of thelithography apparatus 100 are illustrated, e.g., the reticle 112, theworkpieces 122 and 124, the position sensor 128, the reticle stage 130,the first wafer stage 150, the second wafer stage 160, the firstpositioning device 132 and the second positioning device 172, forproviding more details. Other features of the lithography apparatus 100are omitted from FIG. 2A in order to avoid obscuring other aspects ofFIG. 1 .

In some embodiments, the first positioning device 132 is arranged at theexposure site Se. The first positioning device 132 supports and securesthe reticle stage 130 and is configured to move the reticle stage 130.The first positioning device 132 may include one or more of rails ortracks 134 interconnected to each other through sliding structures 136for forming a support structure. For example, the first positioningdevice 132 includes a first rail 134A and a second rail 134B arranged inparallel and extending along the Y-axis, and a third rail 134C extendingalong the X-axis and interconnected to the first rail 134A and thesecond rail 134B through corresponding sliding structures 136A and 136B.The sliding structures 136 may be configured to move the reticle stage130 during an exposure operation to allow the radiation beam Ra to scanacross the exposure fields of the workpiece 122. In some embodiments,the sliding structures 136 are configured to move on the rails 134through mechanical force, electromagnetic force, magnetic levitation,vacuum force, or the like.

The second positioning device 172 is arranged below the firstpositioning device 132 and extends across the exposure site Se and themeasurement site Sm. In some embodiments, the second positioning device172 includes one or more rails or tracks 174 interconnected throughsliding structures 176 and 178, and is configured to move the firstwafer stage 150 and the second wafer stage 160 to desired positions. Forexample, the second positioning device 172 includes a first rail 174A, asecond rail 174B, a third rail 174C and a fourth rail 174Dinterconnected through corresponding sliding structures 176 (i.e., thesliding structures 176A, 176B, 176C and 176D). The second positioningdevice 172 may further include sliding structures 178 configured toslide on the rails 174, through which the first wafer stage 150 or thesecond wafer stage 160 is clamped or released during a positioningoperation or a stage swap operation. In some embodiments, the slidingstructures 176 are configured to slide on the rails 174 throughmechanical force, electromagnetic force, magnetic levitation, vacuumforce, or the like. In some embodiments, the sliding structures 178 areconfigured to clamp and release the first wafer stage 150 or the secondwafer stage 160 through electromagnetic force, electrostatic force,vacuum force, or the like.

In some embodiments, the second rail 174B is configured to clamp thesecond wafer stage 160 by the sliding structure 178 and carry the secondwafer stage 160 to move along the X-axis through sliding on the secondrail 174B, or move along the Y-axis through sliding of the slidingstructures 176A and 176B on the first rail 174A and the third rail 174C,respectively. Similarly, the fourth rail 174D is configured to clamp thefirst wafer stage 150 by another sliding structure (not shown) and carrythe first wafer stage 150 to move along the X-axis through sliding onthe fourth rail 174D, or move along the Y-axis through sliding of thesliding structures 176C and 176D on the first rail 174A and the thirdrail 174C, respectively.

During a stage swap operation (also referred to herein as a wafer swapoperation), the positions of the first wafer stage 150 and the secondwafer stage 160 are swapped thorough operations of the secondpositioning device 172. For example, the first wafer stage 150 and thesecond wafer stage 160 are clamped to the fourth rail 174D and thesecond rail 174B, respectively, and carried to the boundary between theexposure site Se and the measurement site Sm. The sliding structures 178are configured to release the corresponding one of the first wafer stage150 and the second wafer stage 160 and capture the other one of thefirst wafer stage 150 and the second wafer stage 160. As a result, thefirst wafer stage 150 is clamped to the second rail 174B and the secondwafer stage 160 is clamped to the fourth rail 174D to accomplish thestage swap operation.

The level sensor device 152 is arranged over the second wafer stage 160at the measurement site Sm. In some embodiments, the level sensor device152 includes a support structure 158 and one or more level sensors 156arranged on the support structure 158. In some embodiments, during atopography measurement operation, the second wafer stage 160 and thelevel sensor device 152 cause a relative movement along the Y-axis. Inthe meantime, the one or more level sensors 156 are configured to scanthe surfaces of the workpiece 124. In some embodiments, as shown in FIG.2A, the support structure 158 extends along the X-axis, and the levelsensors 156 are arranged in parallel along the X-axis. In someembodiments, each of the level sensors 156, e.g., an exemplary levelsensor 156A, is arranged to extend along the Y-axis. In this way, theparallel level sensors 156 can perform concurrent surface topographymeasurement operations for saving data measurement time.

FIG. 2B is a schematic timeline of processing steps in a lithographyoperation, in accordance with some embodiments of the presentdisclosure. At time instant T0, the workpiece 122 is arranged at theexposure site Se with the presumption that the alignment operation andsurface topography measurement operation have been completed. During atime period between time instants T0 and T2, an exposure operation 206is performed on the workpiece 122 at the exposure site Se. In themeantime, a wafer transport operation 202 is performed from time instantT0 to time instant T1 to move the workpiece 124 from a transportinterface to the second wafer stage 160. The second wafer stage 160 ismoved to the measurement site Sm with the workpiece 124. Subsequently,during a time period between time instant T1 to time instant T2, asurface topography measurement operation 204 is performed on theworkpiece 124. In some embodiments, the measurement data is transmittedto the control device 114 during or after the surface topographymeasurement operation 204.

In some embodiments, during a time period between time instants T2 andT3, a stage swap operation 208 is performed to swap the workpieces 122and 144 through swapping the first wafer stage 150 and the second waferstage 160. In some embodiments, during the stage swap operation 208, thefirst wafer stage 150 and the second wafer stage 160 are handled andmoved by the second positioning device 172 to reach the measurement siteSm and the exposure site Se, respectively.

In some embodiments, subsequent to the positioning operation of thesecond positioning device 172, during a time period between timeinstants T3 and T4, a reticle alignment operation 212 is performed toalign the reticle 112 with the workpiece 124. In some embodiments,during the reticle alignment operation 212, a radiation preparationoperation is performed to ensure that the radiation beam Ra is ready forpatterning the workpiece 124. In other embodiments, the radiationpreparation operation is performed subsequent to the reticle alignmentoperation 212.

In some embodiments, during a time period between time instants T4 andT5, an exposure operation 218 is performed on the workpiece 124 at theexposure site Se. In some embodiments, concurrent with the exposureoperation 218, the workpiece 122 is removed from the second wafer stage160 or the measurement site Sm in a wafer transport operation 214, andthe first wafer stage 150 is therefore left empty. Subsequently, anotherworkpiece 126 may be transported and received by the first wafer stage150 during the wafer transport operation 214.

Subsequently, during a time period between time instants T5 and T6,another surface topography measurement operation 216 is performed on theworkpiece 126. In some embodiments, the measurement data is transmittedto the control device 114 during or after the surface topographymeasurement operation 216. The abovementioned operations may be repeateduntil the lithography operations on all of the workpieces are completed.

FIGS. 3A and 3B show an elevation view and a top view, respectively, ofa level sensor device 300 in a first scan mode of the surface topographymeasurement operation, in accordance with various embodiments of thepresent disclosure. FIG. 3A is taken along a section line AA of FIG. 3B.The first scan mode may be employed in the surface topographymeasurement operation 204 or 216 shown in FIG. 2B.

Referring to FIG. 3A, a workpiece 302 is provided, which is similar tothe workpiece 122, 124 or 126 illustrated in FIG. 1 , FIG. 2A or FIG.2B. The workpiece 302 may include a substrate 322 and a material layer324 deposited over the substrate 322. The substrate 322 is asemiconductor substrate formed of, e.g., silicon, germanium, or othersuitable semiconductor substrate materials. In some embodiments, thematerial layer 324 includes a photosensitive material that can changeits chemical composition when exposed to a suitable radiation. Thematerial layer 324 may be a photoresist layer. The material layer 324may be deposited over the substrate 322 using chemical vapor deposition(CVD), atomic layer deposition (ALD), spin coating, or another suitabledeposition method. In some embodiments, the workpiece 302 includes oneor more intermediate layers between the material layer 324 and thesubstrate 322.

Referring to FIG. 3B, the workpiece 302 includes a grid of exposurefields FD from a top-view perspective. In some embodiments, theworkpiece 302 defines a plurality of strip areas 304 arranged inparallel and extending along the Y-axis, in which each strip area 304 isformed as a union of contiguous exposure fields FD at a same horizontalposition of the workpiece 302. In some embodiments, the lengths of thestrip areas 304 in different horizontal positions (along the X-axis) maybe different due to a circular shape of the workpiece 302. In thedepicted embodiment, the workpiece 302 includes eleven strip areas 304,and a third strip area 304 from a left side of the workpiece 302includes nine exposure fields FD. In the present disclosure, a specificexposure field FD in the workpiece 302 is referred to by its coordinatesin terms of units of the exposure fields FD. For example, the exposurefield FD marked with a dashed box in FIG. 3B, which is a second exposurefield FD from a bottom in the third strip area 304, is referred to asFD₃₂.

The level sensor device 300 may be similar to the level sensor device152 shown in FIG. 1 and FIG. 2A. In some embodiments, the level sensordevice 300 includes a plurality of level sensors 310 and a supportstructure 320. In some embodiments, the support structure 320 is formedof rigid materials for supporting and securing the level sensors 310.The support structure 320 extends along the X-axis over the workpiece302. In some embodiments, the level sensor device 300 includes an arrayof level sensors 310 arranged along the X-axis. Each of the levelsensors 310 includes an emitter 312 and a detector 314 arranged in acolumn extending along the Y-axis. The emitter 312 is configured to emita sensing light Rm to a surface of the material layer 324, and thesensing light Rm is reflected from the surface of the material layer324. The detector 314 is configured to receive the sensing light Rmreflected from the surface of the material layer 324. In someembodiments, the emitter 312 includes a light-emitting diode (LED), alaser diode, or another suitable optical transmitter. In someembodiments, the detector 314 includes a photodetector or anothersuitable optical receiver. In some embodiments, the emitters 312 of thearray of the level sensors 310 are arranged in a first row extendingalong the X-axis, and the detectors 314 of the array of the levelsensors 310 are arranged in a second row extending along the X-axisparallel to the first row. In some embodiments, the sensing light Rmemitted by the emitter 312 includes a wavelength or power that will notchange the chemical composition of the material layer 324 during asurface topography measurement operation.

During the first scan mode of the surface topography measurementoperation, at least one of the workpiece 302 and the level sensor device300 is moved along the Y-axis to cause a relative movement between theworkpiece 302 and the level sensor device 300 along the Y-axis. In someembodiments, the workpiece 302 is moved by the second wafer stage 160 ina positive direction along the Y-axis, which is referred to herein as aforward direction Df, to cause the relative movement between theworkpiece 302 and the level sensor device 300. In some embodiments, thelevel sensor device 300 is moved in a negative direction along theY-axis, which is referred to herein as a reverse direction Dr oppositeto the forward direction Df, to cause the relative movement between theworkpiece 302 and the level sensor device 300. With the first scan mode,the surface of the material layer 324 is scanned along the reversedirection Dr from a top exposure field adjacent to a top side 302T ofthe workpiece 302 to a bottom exposure field adjacent to a bottom side302B of the workpiece 302.

In some embodiments, the emitter 312 and the detector 314 of each levelsensor 310 are arranged in a column along the Y-axis. In other words,the sensing light Rm propagates in a negative direction along theY-axis, or the reverse direction Dr, from a top-view perspective. Insome embodiments, the sensing light Rm is emitted from the emitter 312to the detector 314 in the reverse direction Dr opposite to the forwarddirection Df in which the workpiece 302 is moved. In some embodiments,the level sensors 310 are aligned with the corresponding strip areas 304from a top-view perspective. During a surface topography measurementoperation, each level sensor 310 scans a corresponding strip area 304while the workpiece 302 is moved relative to the level sensor device300. In some embodiments, the sensing light Rm has a projection of arectangular shape or an elongated shape on the workpiece 302. In someembodiments, the projection of the sensing light Rm has a length alongthe X-axis substantially equal to greater than a width of one strip area304 or one exposure field FD.

FIG. 3C shows matrices of surface topography measurement data, inaccordance with some embodiments of the present disclosure. In someembodiments, the outputs of surface topography measurement data for thematerial layer 324 provided by the level sensor device 300 may beconverted from an analog form to a digital form and transmitted to thecontrol device 114. A target exposure field FD may be partitioned intoan array of K-by-L measurement spots. Raw data of a surface topographymeasurement result D_(mn)(k,l) for a target exposure field FD_(mn) maybe represented by a K-by-L matrix D_(mn), where a (k,l)-th element ofthe matrix D_(mn) corresponds to a (k,l)-th measurement spot of thetarget exposure field FD_(mn).

As illustrated in FIG. 3C, raw data of the surface topographymeasurement results can be arranged as a cascade of the matrices D forthe cascaded exposure fields in the m-th strip area 304, and can beexpressed as RSTM_(i)=[D_(mN); D_(m(N-1)); . . . D_(m2); D_(m1)], wherethe variable i represents the i-th scan mode. In some embodiments, theraw surface topography measurement data RSTM₁ obtained using the firstscan mode is generated by scanning the exposure fields FD_(mN),FD_(m(N-1)), . . . FD_(m2), FD_(m1) in order.

In some embodiments, raw data of a two-dimensional measurement resultD_(mn)(k,l) is further processed to generate a one-dimensional processedsurface topography measurement data PSTM_(i), and can be represented asPSTMA_(i)=[H_(mN); H_(m(N-1)); . . . H_(m2); H_(m1)]=[H_(mN) (K); H_(mN)(K-1); . . . H_(mN)(1); H_(m(N-1)) (K); H_(m(N-1)) (K-1); . . .H_(m(N-1)) (1); . . . H_(m1) (K); H_(m1) (K-1); . . . H_(m1) (1)]. Insome embodiments, single-column processed surface topography measurementdata PSTM_(i) is generated by averaging the raw data RSTM_(i) row byrow. In some embodiments, the processed surface topography measurementdata PSTM_(i) using the first scan mode is generated in a reversedirection Dr in the order of H_(mN) (K), H_(mN) (K-1), . . . H_(mN)(1),H_(m(N-1)) (K), H_(m(N-1)) (K-1), . . . H_(m(N-1)) (1), . . . H_(m1)(K), H_(m1) (K-1), . . . H_(m1) (1).

In some embodiments, the two-dimensional raw measurement data RSTM_(i)of the m-th strip area 304 includes at least one of a height (orthickness) profile and a tilt angle (or slope) profile at eachmeasurement spot of the exposure field FD_(mn) in the m-th strip area304, n=1, 2, . . . N, in which each exposure field FD_(mn) is associatedwith a scanning granularity of K-by-L samples. In some embodiments, theprocessed surface topography measurement data PSTM_(i) of the m-th striparea 304 includes at least one of a height (or thickness) profile and atilt angle (or slope) profile along the Y-axis of the exposure fieldFD_(mn) of the m-th strip area 304, n=1, 2, . . . N, in which eachexposure field FD_(mn) is associated with a scanning granularity of Lsamples along the Y-axis.

FIGS. 3D and 3E show an elevation view and a top view, respectively, ofthe level sensor device 300 in a second scan mode of the surfacetopography measurement operation, in accordance with various embodimentsof the present disclosure. The second scan mode may be employed in thesurface topography measurement operation 204 or 216 shown in FIG. 2B.The settings of the level sensor device 300 for the second scan mode aresimilar to those used in the first scan mode, and descriptions of suchsimilar aspects are not repeated for brevity. In some embodiments, atleast one of the first scan mode or the second scan mode, or both, isemployed in the surface topography measurement operation 204 or 216.

In some embodiments, during the second scan mode of the surfacetopography measurement operation, at least one of the workpiece 302 andthe level sensor device 300 is moved along the Y-axis to cause arelative movement between the workpiece 302 and the level sensor device300 along the Y-axis. The second scan mode is different from the firstscan mode in that, in the second scan mode, the workpiece 302 is movedby the second wafer stage 160 in a negative direction along the Y-axis,or equivalently the reverse direction Dr, to cause the relative movementbetween the workpiece 302 and the level sensor device 300. In someembodiments, the level sensor 300 is moved in a positive direction alongthe Y-axis, i.e., the forward direction Df, to cause the relativemovement between the workpiece 302 and the level sensor device 300.During the second scan mode, the surface of the material layer 324 isscanned from a bottom exposure field adjacent to the bottom side 302B toa top exposure field adjacent to the top side 302T.

Referring to FIG. 3C, similar to the raw surface topography measurementdata RSTM₁, raw surface topography measurement data RSTM₂ for the m-thstrip area 304 under the second scan mode can be expressed asRSTM₂=[D_(mN); . . . D_(m2); D_(m1)]. In some embodiments, the rawmeasurement data RSTM₂ obtained using the first scan mode is generatedin a forward direction Df by scanning the exposure fields FD_(m1),FD_(m2), . . . FD_(m(N-1)), FD_(mN) in order. As a result, theone-dimensional processed surface topography measurement data PSTM₂ maybe generated in an order of H_(m1) (1), H_(m1) (2), . . . H_(m1) (K),H_(m2) (1), H_(m2) (2), . . . H_(m2) (K), H_(mN) (1), H_(mN) (2), . . .H_(mN) (K).

As discussed previously, the relative movement between the level sensordevice 300 and the workpiece 302, and the resultant scan route, are atleast caused by the movement of the second wafer stage 160 through thepositioning device 172. In some embodiments, a first scan route underthe first scan mode, which is traversed on the surface of the materiallayer 324, fully or only partially overlaps a second scan routetraversed under the second scan mode. In some embodiments, the firstscan route traversed under the first scan mode is close to but notidentical to the second scan route traversed under the second scan mode.The reason why the first scan route is not identical to the second scanroute may be due to physical constraints of the parts of the secondwafer stage 160 and the positioning device 172, in which the constraintsmay include, but are not limited to, design tolerance of parts, aging,different operating conditions, or the like. As a result, the surfacetopography measurement data RSTM₁ or PSTM₁ may be different from thesurface topography measurement data RSTM₂ or PSTM₂.

FIGS. 4A and 4B show an elevation view and a top view, respectively, ofthe workpiece 302 in an exposure operation, in accordance with variousembodiments of the present disclosure. The exposure operation discussedin FIGS. 4A and 4B may be similar to the exposure operation 206 or 218shown in FIG. 2B.

During the exposure operation, at least one of the workpiece 302 and thelevel sensor device 300 is moved along the Y-axis to cause a relativemovement between the workpiece 302 and the level sensor device 300 alongthe Y-axis. In some embodiments, the workpiece 302 is moved by thesecond wafer stage 160 in a positive or negative direction along theY-axis to cause the relative movement between the workpiece 302 and thelevel sensor device 300. In some embodiments, the projection module 140is moved in the positive or negative direction along the Y-axis to causethe relative movement between the workpiece 302 and the projectionmodule 140.

In some embodiments, relative movement between workpiece 302 and theprojection module 140 causes the radiation beam Ra to scan each of theexposure fields in the workpiece 302 either in the forward direction Dfor the reverse direction Dr according to a scan route plan. The scanroute plan is determined to reduce the transition time between theexposure operations on consecutive exposure fields FD. The scan routeplan may be determined based on one or more factors, e.g., thedimensions of each of the exposure fields FD, the topology of theexposure fields FD in the workpiece 122 or 124, and the exposuresettings for each of the exposure fields FD. In the depicted example,adjacent exposure fields FD are assigned with reverse scan directions Dfand Dr according to an example scan route plan, such that the projectionmodule 140 can be moved to another exposure field FD and start anothershot of exposure with a minimal transition time. In some embodiments,the relative movement between the workpiece 302 and the projectionmodule 140 is accomplished by the movement of the second wafer stage 160along either the first scan route or the second scan route, just likethose used in the first scan mode and the second scan mode forperforming surface topography measurement.

When the radiation beam Ra is ready to impinge on a target exposurefield FD, the surface topography measurement data RSTM₁ or PSTM₁ isprovided to compensate for the bias of the depth-of-focus (DOF) and tiltangle in each exposure spot of the exposure fields FD. In someembodiments, the control device 114 is configured to provide the surfacetopography measurement data RSTM₂ or PSTM₂ for the exposure fields FDthat are exposed in the forward direction Df, i.e., both the surfacetopography measurement operation and the exposure operation areperformed along the second scan route, which follows the forwarddirection Df. Similarly, the control device 114 is configured to providethe surface topography measurement data RSTM₁ or PSTM₁ for the exposurefields FD that are exposed in the reverse direction Dr, i.e., both thesurface topography measurement operation and the exposure operation areperformed along the first scan route, which follows the reversedirection Dr. The separate surface topography measurement dataRSTM₁/PSTM₁ or RSTM₂/PSTM₂ may aid in determining the DOF profile or thetilt angle profile of the radiation beam Ra at different exposure spotsof each exposure field FD. The data mismatch due to mismatched scanroutes between the measurement operation and the exposure operation canbe eliminated or reduced, and the exposure performance can thus be mademore accurate and more efficient.

FIG. 5 shows a schematic diagram of shadow zones of the workpiece 302 orthe material layer 324, in accordance with some embodiments. Twoemitters 312A and 312B of the level sensor device 300 are illustratedwith respective incident angles α₁ and α₂ with respect to a normal lineN1 perpendicular to the surface of the workpiece 302 or a referencehorizontal plane of the workpiece 302. The detector 314 is omitted fromFIG. 5 for brevity.

As shown in FIG. 5 , as the workpiece 302 is moved to cause a relativemovement, either in the forward direction or the reverse direction,between the workpiece 302 and the emitter 312A, a sensing light Rm1 isemitted and incident repeatedly on the surface of the material layer 324with identical incident angles α₁. In some embodiments, the materiallayer 324 includes a hump portion Hx in the course of the scan route ofthe sensing light Rm1, and a shadow zone Z1 for the sensing light Rm1 isthus generated around the backside of the hump portion Hx with respectto the emitter 312A. The surface topography measurement result in theshadow zone Z1 may be in error or distorted since the actual surfacetopography in the shadow zone Z1 is not available under the scheme ofthe sensing light Rm1.

Similarly, as the workpiece 302 is moved to cause a relative movementbetween the workpiece 302 and the emitter 312B, a sensing light Rm2 isemitted and incident repeatedly on the surface of the material layer 324with identical incident angles α₁₂. In some embodiments, the incidentangles α₁ and α₂ are substantially equal. Due to the presence of thehump portion Hx in the course of the scan route of the sensing lightRm2, a shadow zone Z2 is thus generated around a backside of the humpportion Hx with respect to the emitter 312B. The surface topographymeasurement result in the shadow zone Z2 may be in error or distorted.

To reduce or eliminate the measurement errors found in the shadow zoneZ1 or Z2, the emitter 312 or the detector 314 is arranged such that theincident angles α₁ and α₂ are reduced. Referring to FIG. 3A, theincident angle α₁ is configured as substantially equal to or less than30 degrees. In some embodiments, the incident angle α₁ is substantiallyequal to or less than 20 degrees, substantially equal to or less than 10degrees, or substantially equal to or less than 5 degrees.

Referring to FIG. 3B, the emitter 312 and the detector 314 are spaced bya distance or spacing W1 along the Y-axis. In some embodiments, thedistance W1 is no greater than a width L1, measured along the Y-axis, ofone exposure field FD. In some embodiments, two adjacent emitters 312 ortwo adjacent detectors 314 of adjacent level sensors 310 are spaced by adistance or spacing W2 along the X-axis. In some embodiments, thedistance W2 is no greater than a width L2, measured along the X-axis, ofone exposure field FD. Through the arrangements of the distances orspacing values of the level sensors 310, the incident angle α₁ of thesensing light Rm can be reduced. Accordingly, the area of the shadowzone Z1 or Z2 can be decreased.

Referring to FIG. 5 , it should be noted that although the surfacetopography in the shadow zone Z1 cannot be successfully measured by thesensing light Rm1, such shadow zone Z1 is not shadowed from theviewpoint of the sensing light Rm2. Therefore, emitting the sensinglight Rm2 from a direction opposite to the sensing light Rm1 in theyz-plane may help resolve the problem of measurement error in the shadowzone Z1. Likewise, emitting the sensing light Rm1 from a directionopposite to the sensing light Rm2 in the yz-plane may help resolve theproblem of measurement error in the shadow zone Z2, as explained ingreater detail below.

FIGS. 6A and 6B show two elevation views, and FIG. 6C shows a top view,of a level sensor device 600 in a third scan mode of the surfacetopography measurement operation, in accordance with various embodimentsof the present disclosure. FIG. 6A is taken along a section line AA ofFIG. 6C, and FIG. 6B is taken along a section line BB of FIG. 6C. Thethird scan mode may be employed in the surface topography measurementoperation 204 or 216 shown in FIG. 2B. The level sensor device 600 shownin FIGS. 6A through 6C is similar to the level sensor device 300 shownin FIGS. 3A and 3B, and descriptions of similar aspects are not repeatedfor brevity.

The level sensor device 600 includes an array of level sensors 610arranged on the support structure 320. The level sensor device 600differs from the level sensor device 300 in the arrangement of the levelsensors 610. In some embodiments, the emitters 312 of the array of levelsensors 610 are arranged in a staggered manner. Similarly, the detectors314 of the array of level sensors 610 are arranged in a staggeredmanner.

In some embodiments, the emitters 312 of the array of level sensors 610are alternatingly arranged with the detectors 314 along the X-axis. Inthe depicted embodiment, the workpiece 302 includes exemplary stripareas 304A and 304B adjacent to each other. The level sensor device 600includes a plurality of first type level sensors 310A and a plurality ofsecond type level sensors 310B alternatingly arranged with the firsttype level sensors 310A. The order of the emitter 312A and the detector314A along the Y-axis is opposite to the order of the emitter 312B andthe detector 314B along the Y-axis. The two emitters 312A and 312B ofthe respective level sensors 310A and 310B are arranged on a firstdiagonal line P1 of a square formed by the level sensors 310A and 310B,while the two detectors 314A and 314B of the respective level sensors310A and 310B are arranged on another diagonal line P2 of the square.

As illustrated in FIGS. 6A and 6B, the first type level sensors 310Aemit the sensing light Rm1 in the reverse direction Dr from a top-viewperspective, and the second type level sensors 310B emit the sensinglight Rm2 in the forward direction Df from a top-view perspective. Insome embodiments, the sensing lights Rm1 and Rm2 of the adjacent levelsensors 310A and 310B travel in different directions from a top-viewperspective. Referring to FIG. 6C, the sensing lights Rm1 and Rm2 travelin opposite directions from a top-view perspective.

During the third scan mode, the third scan routes for each of the stripareas 304 (including the exemplary strip areas 304A and 304B) shown inFIGS. 6A through 6C are identical to the first scan routes used forscanning each of the strip areas 304 shown in FIGS. 3A and 3B. This isbecause the relative movements under the first scan mode and the thirdscan mode are identical, i.e., performed by either the second waferstage 160 or the level sensor device 300 or 600. In addition, thesurface topography measurement results for the odd-numbered strip areas304 (e.g., the strip area 304A) under the third scan mode may be similarto the surface topography measurement results for the odd-numbered stripareas 304 under the first scan mode. However, since the sensing lightRm2 emitted by the second type level sensor 310B travels in a directiondifferent from, e.g., opposite to, the direction in which the sensinglight Rm1 travels from a top-view perspective, the surface topographymeasurement results for the even-numbered strip areas 304 (e.g., thestrip area 304B) may be different from the surface topographymeasurement results for the even-numbered strip areas 304 under thefirst scan mode, at least in potential shadow zones for the sensinglight Rm1.

FIGS. 6D and 6E show two elevation views, and FIG. 6F shows a top view,of the level sensor device 600 in a fourth scan mode of the surfacetopography measurement operation, in accordance with various embodimentsof the present disclosure. FIG. 6D is taken along a section line AA ofFIG. 6F, and FIG. 6E is taken along a section line BB of FIG. 6F. Thefourth scan mode may be employed in the surface topography measurementoperation 204 or 216 shown in FIG. 2B.

The surface topography measurement operations performed under the fourthscan mode are similar to those performed under the third scan mode,except that the odd-numbered strip areas 304 (e.g., strip area 304A) arescanned using the sensing light Rm2 emitted by the second type levelsensors 310B, while the even-numbered strip areas 304 (e.g., strip area304B) are scanned using the sensing light Rm1 emitted by the first typelevel sensors 310A. As a result, through the third scan mode and thefourth scan mode, each strip area 304 is scanned twice by the respectivesensing lights Rm1 and Rm2. In some embodiments, the fourth scan mode isperformed subsequent to the third scan mode, in which a relativemovement is caused between the workpiece 302 and the level sensor device600 along the X-axis such that the odd-numbered strip areas 304 (e.g.,strip area 304A) align with the second type level sensors 610B while theeven-numbered strip areas 304 (e.g., strip area 304B) align with thefirst type level sensors 610A. The measurement results for the shadowzones under one of the third scan mode and the fourth scan mode can becompensated for by the measurement results in the other one of the thirdscan mode and the fourth scan mode to generate updated measurementresults for each of the strip areas 304. Alternatively or additionally,the measurement results for the whole strip area 304 obtained throughthe third scan mode and the fourth scan mode can be combined, e.g.,through an averaging operation, to generate an updated measurementresult of the whole respective strip area 304.

In some embodiments, the surface topography measurement performed usingthe level sensor device 300 under the first scan mode and the secondscan mode with reference to FIGS. 3A, 3B, 3D and 3E can be performedusing the level sensor device 600 shown in FIGS. 6A through 6F. Forexample, the first type level sensors 610A share the same configurationsas the level sensors 310; however, the number of the first type levelsensors 610A is only half the number of the level sensors 310.Therefore, the first scan mode or the second scan mode is accomplishedusing the level sensor device 600 by performing twice the scanningprocesses that are performed using the level sensor device 300.

FIG. 7 shows a flowchart of a lithography method 700, in accordance withsome embodiments. It shall be understood that additional steps can beprovided before, during, and after the steps shown in FIG. 7 , and someof the steps described below can be replaced or eliminated, foradditional embodiments of the method 700. The order of the steps may beinterchangeable. Some of the steps may be performed concurrently orindependently.

At step 702, a first workpiece is provided to a measurement site of asemiconductor apparatus. At step 704, a surface topography measurementoperation is performed on the first workpiece at the measurement site togenerate first measurement data. In some embodiments, the firstmeasurement data includes a thickness profile and a tilt angle profileof a surface of the first workpiece. In some embodiments, the firstmeasurement data is generated according to at least one of a first scanmode, a second scan mode, a third scan mode and a fourth scan mode asdiscussed with reference to FIGS. 3A, 3B, 3D, 3E, 6A, 6B, 6C, 6D, 6E and6F.

At step 706, subsequent to the surface topography measurement operation,the first workpiece is moved to an exposure site of the semiconductorapparatus. At step 708, a reticle alignment operation is performed atthe exposure site. At step 710, an exposure operation is performed onthe first workpiece at the exposure site according to the firstmeasurement data.

At step 712, a second workpiece is provided to the measurement site ofthe semiconductor apparatus. At step 714, a surface topographymeasurement operation is performed on the second workpiece at themeasurement site to generate second measurement data. In someembodiments, the second measurement data includes a thickness profileand a tilt angle profile of a surface of the second workpiece. In someembodiments, the second measurement data is generated according to atleast one of a first scan mode, a second scan mode, a third scan modeand a fourth scan mode as discussed with reference to FIGS. 3A, 3B, 3D,3E, 6A, 6B, 6C, 6D, 6E and 6F. In some embodiments, steps 712 and 714are performed concurrently with steps 708 and 710.

At step 716, the first workpiece is swapped with the second workpiecebetween the exposure site and the measurement site subsequent to thecompletion of the exposure operation on the first workpiece and thesurface topography measurement operation on the second workpiece. Insome embodiments, the semiconductor apparatus includes a first waferstage and a second wafer stage configured to support and carry the firstworkpiece and the second workpiece, respectively. The swap operation isperformed by swapping the first wafer stage with the second wafer stage.

At step 718, an exposure operation is performed on the second workpieceat the exposure site according to the second measurement data. At step720, the first workpiece is removed from the measurement site or thesemiconductor apparatus.

At step 722, it is determined whether all workpieces are completed. Ifaffirmative, the second workpiece is removed from the semiconductorapparatus at step 724 in response to the completion of the exposureoperation on the second workpiece. Otherwise, if one or more workpiecesare scheduled for receiving the lithography operation, the method 700may loop back to step 712 to provide another workpiece to themeasurement site of the measurement apparatus and proceed with thesubsequent steps until all workpieces are completed.

FIG. 8 shows a flowchart of a lithography method 800, in accordance withsome embodiments. It shall be understood that additional steps can beprovided before, during, and after the steps shown in FIG. 8 , and someof the steps described below can be replaced or eliminated, foradditional embodiments of the method 800. The order of the steps may beinterchangeable. Some of the steps may be performed concurrently orindependently.

At step 802, a first workpiece is provided to a measurement site of asemiconductor apparatus. In some embodiments, step 802 corresponds tostep 702 or step 712 of the method 700.

In some embodiments, steps 804, 806, 808, 810 and 812 are related to thesurface topography measurement operation described in step 704 or step714 of the method 700. At step 804, a workpiece alignment operation isperformed on the first workpiece. In some embodiments, the workpiecealignment operation includes adjustment of the location and orientationof the first workpiece. Subsequently, one or more of steps 806, 808, 810and 812 are performed to implement the surface topography measurementoperation at step 704 or 714 and generate raw measurement data. At step806, a first scan mode is performed on the first workpiece along a firstscan route with a first scan direction of a first sensing light. At step808, a second scan mode is performed on the first workpiece along asecond scan route with the first scan direction of the first sensinglight. In some embodiments, the first scan route may be along a reversedirection, e.g., in a negative direction along the Y-axis, while thesecond scan route may be along a forward direction, e.g., in a positivedirection along the Y-axis. In some embodiments, the first direction ofthe first sensing light may be the reverse direction, e.g., in thenegative direction along the Y-axis.

At step 810, a third scan mode is performed on the first workpiece usingthe first sensing light and a second sensing light to scan therespective odd-numbered and even-numbered strip areas in the firstdirection and the second direction, respectively. A third scan routeused for all of the strip areas under the third scan mode can be alongthe forward direction or the reverse direction. In some embodiments, thesecond direction of the second sensing light may be along the forwarddirection.

At step 812, a fourth scan mode is performed on the first workpieceusing the first sensing light and the second sensing light to scan therespective odd-numbered and even-numbered strip areas in the firstdirection and the second direction, respectively. A fourth scan routeused for all of the strip areas under the fourth scan mode can be alongthe forward direction or the reverse direction, but is opposite to thedirection of the third scan route.

In some embodiments, steps 806, 808, 810 and 812 can be performed insuccession in any order.

At step 814, processed measurement data is generated according to rawmeasurement data generated under at least one of the first, second,third and fourth scan modes. In some embodiments, the raw measurementdata generated under the first scan mode and the second mode is combinedto generate the processed or updated measurement data. In someembodiments, the raw measurement data generated under the third scanmode and the fourth mode is combined to generate the processed orupdated measurement data. In some embodiments, the raw measurement dataof a shadow zone generated under the third scan mode is replaced withthe raw measurement data of such shadow zone generated under the fourthscan mode, to generate the processed or updated measurement data. Insome embodiments, the raw measurement data of a shadow zone generatedunder the fourth scan mode is replaced with the raw measurement data ofsuch shadow zone generated under the third scan mode, to generate theprocessed or updated measurement data.

At step 816, surface DOF profiles and surface tilt angle profiles of thefirst workpiece are generated according to the raw measurement data orthe processed measurement data. In some embodiments, the surface DOFprofile is generated according to the measurement data in a proportionalmanner or following a linear equation. In some embodiments, the surfaceDOF profile is generated according to the measurement data following anon-linear equation. For example, for a certain thickness value in thethickness profile greater than a predetermined value, it is determinedthat such thickness value may not be reliable, and thus is mapped to acorresponding DOF value with a ratio less than a DOF mapping ratio forother thickness values.

At step 818, an exposure operation is performed on the first workpieceaccording to the surface DOF profiles and the surface tilt angleprofiles. The DOF data and tilt angle data of the radiation beam for theexposure operation are determined based on the surface DOF profiles andthe surface tilt angle profiles. In some embodiments, step 816 and step818 correspond step 710 or step 718 of the method 700.

FIG. 9 is a schematic diagram of a system 900 for implementing alithography method, in accordance with some embodiments. The system 900includes a processor 901, a network interface 903, an input and output(I/O) device 905, a storage 907, a memory 909, and a bus 908. The bus908 couples the network interface 903, the I/O device 905, the storage907, the memory 909 and the processor 901 to each other.

The processor 901 may correspond to or be included in the control device114. The processor 901 is configured to execute program instructionsconfigured to perform the steps in the lithography method as describedand illustrated with reference to figures of the present disclosure. Insome embodiments, the processor 901 is configured to control sensing,acquisition and processing of the surface topography measurement data.In some embodiments, the processor 901 is configured to controlalignment and moving of the wafer stage, the reticle stage and the levelsensor device.

The network interface 903 is configured to access program instructionsand data accessed by the program instructions stored remotely through anetwork (not shown). In some embodiments, the network interface 903connects the processor 901 to parts of the lithography apparatus. Insome embodiments, the network interface 903 connects the lithographyapparatus to external devices.

The I/O device 905 includes an input device and an output deviceconfigured for enabling user interaction with the system 900. In someembodiments, the input device includes, for example, a keyboard, amouse, a trackball, a touchpad, a fingerprint sensor, and other devices.Moreover, the output device includes, for example, a display, a printer,and other devices.

The storage device 907 is configured for storing program instructionsand data, e.g. the surface topography measurement data or other controldata, accessed by the program instructions. In some embodiments, thestorage device 907 includes a non-transitory computer readable storagemedium, for example, a magnetic disk and an optical disk.

The memory 909 is configured to store program instructions to beexecuted by the processor 901 and store data accessed by the programinstructions. In some embodiments, the memory 909 includes anycombination of a random-access memory (RAM), some other volatile storagedevice, a read only memory (ROM), and some other non-volatile storagedevice.

Some embodiments of the present disclosure provide a method. The methodincludes providing a workpiece to a semiconductor apparatus, theworkpiece including a material layer, wherein the material layerincludes a first strip includes: a first plurality of exposure fields;and a second plurality of exposure fields alternatingly arranged withthe first plurality of exposure fields, the first plurality of exposurefields configured to be exposed in a first direction opposite to asecond direction in which the second plurality of exposure fields areconfigured to be exposed. The method further includes: scanning thefirst strip along a first scan route from a first side of the workpieceto a second side of the workpiece to generate first topographymeasurement data; scanning the first strip along a second scan routefrom the second side to the first side to generate second topographymeasurement data; and exposing the first plurality of exposure fieldsand exposing the second plurality of exposure fields according to thefirst topography measurement data and the second topography measurementdata.

Some embodiments of the present disclosure provide a method. The methodincludes providing a workpiece to a semiconductor apparatus, theworkpiece including a material layer, wherein the material layerincludes a plurality of strips, wherein each of the strips includes afirst exposure field configured to be exposed in a first direction and asecond exposure field configured to be exposed in a second directiondifferent from the first direction, wherein the first exposure field andthe second exposure field are adjacent to each other in the respectivestrip. The method further includes: scanning the first exposure field ofeach of the plurality of strips along a first route and a second routedifferent from the first route within the respective strip to generatefirst topography measurement data; scanning the second exposure field ofeach of the plurality of exposure fields along the first route and thesecond route within the respective strip to generate second topographymeasurement data; and exposing the first exposure field and the secondexposure field in the first direction and the second direction,respectively, according to the first topography measurement data and thesecond topography measurement data, respectively.

Some embodiments of the present disclosure provide a semiconductorapparatus. The semiconductor apparatus includes a stage configured tosupport a workpiece, the workpiece including a material layer, whereinthe material layer includes a strip having a first exposure fieldconfigured to be exposed in a first direction and a second exposurefield configured to be exposed in a second direction different from thefirst direction. The semiconductor apparatus further includes a levelsensor device over the stage, and a control unit configured to: move theworkpiece by the stage to a first site of the semiconductor apparatus;scan the first exposure field along a first route and a second route,different from the first route, in the strip to generate firsttopography measurement data; scan the second exposure field along thefirst route and the second route in the strip to generate secondtopography measurement data; move the workpiece by the stage to a secondsite of the semiconductor apparatus; and perform an exposure operationon the first exposure field and the second exposure field according tothe first topography measurement data and the second topographymeasurement data.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother operations and structures for carrying out the same purposesand/or achieving the same advantages of the embodiments introducedherein. Those skilled in the art should also realize that suchequivalent constructions do not depart from the spirit and scope of thepresent disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

1. A method, comprising: providing a workpiece to a semiconductorapparatus, the workpiece comprising a material layer, wherein thematerial layer includes a first strip comprising: a first plurality ofexposure fields; and a second plurality of exposure fields alternatinglyarranged with the first plurality of exposure fields, the firstplurality of exposure fields configured to be exposed in a firstdirection opposite to a second direction in which the second pluralityof exposure fields are configured to be exposed; scanning the firststrip along a first scan route from a first side of the workpiece to asecond side of the workpiece to generate first topography measurementdata; scanning the first strip along a second scan route from the secondside to the first side to generate second topography measurement data;and exposing the first plurality of exposure fields and exposing thesecond plurality of exposure fields according to the first topographymeasurement data and the second topography measurement data.
 2. Themethod of claim 1, further comprising performing an alignment operationon the workpiece prior to the scanning.
 3. The method of claim 1,wherein the exposing of the first plurality and the second plurality ofexposure fields according to the first topography measurement data andthe second topography measurement data comprises: determining a surfacedepth-of-focus (DOF) profile according to the first topographymeasurement data and the second topography measurement data; andexposing each of the first plurality and the second plurality ofexposure fields using a radiation beam with respective DOFs according tothe surface DOF profile.
 4. The method of claim 1, wherein the firstscan route travelled is at least partially non-overlapped with thesecond scan route.
 5. The method of claim 1, wherein the scanning alongthe first scan route and the second scan route is performed by a firstsensing light incident on the workpiece in the first direction from atop-view perspective.
 6. The method of claim 5, further comprising:scanning the first strip along the first scan route from the first sideto the second side by a second sensing light incident on the workpiecein the second direction from a top-view perspective to generate thirdtopography measurement data; and scanning the first strip along thesecond scan route from the second side to the first side by the secondsensing light incident on the workpiece in the second direction togenerate fourth topography measurement data, wherein the exposing of thefirst plurality and the second plurality of exposure fields is furtheraccording to the third and fourth topography measurement data.
 7. Themethod of claim 1, wherein the scanning of the first strip in the firstdirection comprises scanning a plurality of strips, including the firststrip, concurrently in a row direction perpendicular to the firstdirection.
 8. The method of claim 7, further comprising scanning asecond strip of the plurality of strips along a third scan route fromthe first side to the second side to generate fifth topographymeasurement data during the scanning of the first strip from the firstside to the second side; and scanning the second strip along a fourthscan route from the second side to the first side to generate sixthtopography measurement data during the scanning of the first strip fromthe second side to the first side.
 9. The method of claim 8, wherein thescanning of the first strip along the first scan route and the secondscan route is performed by a third sensing light incident on theworkpiece in the second direction from a top-view perspective.
 10. Themethod of claim 9, wherein the scanning of the second strip is performedby a fourth sensing light incident on the workpiece in the firstdirection from a top-view perspective.
 11. A method, comprising:providing a workpiece to a semiconductor apparatus, the workpiececomprising a material layer, wherein the material layer comprises aplurality of strips, wherein each of the strips includes a firstexposure field configured to be exposed in a first direction and asecond exposure field configured to be exposed in a second directiondifferent from the first direction, wherein the first exposure field andthe second exposure field are adjacent to each other in the respectivestrip; scanning the first exposure field of each of the plurality ofstrips along a first route and a second route different from the firstroute within the respective strip to generate first topographymeasurement data; scanning the second exposure field of each of theplurality of exposure fields along the first route and the second routewithin the respective strip to generate second topography measurementdata; and exposing the first exposure field and the second exposurefield in the first direction and the second direction, respectively,according to the first topography measurement data and the secondtopography measurement data, respectively.
 12. The method of claim 11,wherein the second direction is opposite to the first direction from atop-view perspective.
 13. The method of claim 11, wherein the scanningof the first exposure field to generate the first topography measurementdata is performed by emitting a first sensing light to the firstexposure field in the first direction from a top-view perspective,further comprising scanning the first exposure field by emitting asecond sensing light to the first exposure field in the second directionto generate third topography measurement data.
 14. The method of claim13, wherein the first sensing light includes a first incident anglemeasured between a normal line of the material layer and the firstsensing light, and the second sensing light includes a second incidentangle measured between the normal line of the material layer and thesecond sensing light, wherein the first incident angle is substantiallyequal to the second incident angle.
 15. The method of claim 13, furthercomprising generating fourth topography measurement data by replacing afirst portion of the first topography measurement data of a zone of thefirst exposure field with a second portion of the third topographymeasurement data of the zone of the first exposure field, wherein theexposing of the first exposure field is performed according to thefourth topography measurement data.
 16. The method of claim 11, whereinthe first direction and the second direction is parallel to a directionin which each of the strips extends.
 17. A semiconductor apparatus,comprising: a stage configured to support a workpiece, the workpiececomprising a material layer, wherein the material layer includes a striphaving a first exposure field configured to be exposed in a firstdirection and a second exposure field configured to be exposed in asecond direction different from the first direction; a level sensordevice over the stage; and a control unit configured to: move theworkpiece by the stage to a first site of the semiconductor apparatus;scan the first exposure field along a first route and a second route,different from the first route, in the strip to generate firsttopography measurement data; scan the second exposure field along thefirst route and the second route in the strip to generate secondtopography measurement data; move the workpiece by the stage to a secondsite of the semiconductor apparatus; and perform an exposure operationon the first exposure field and the second exposure field according tothe first topography measurement data and the second topographymeasurement data.
 18. The semiconductor apparatus of claim 17, whereinthe level sensor device comprises a plurality of level sensors arrangedalong a first axis substantially perpendicular to a second axis in whichthe strip extends, wherein each of the first and second exposure fieldsincludes a first length measured along the first axis, and two adjacentlevel sensors of the plurality of level sensors are spaced by a firstdistance no greater than the first length.
 19. The semiconductorapparatus of claim 17, wherein the level sensor device comprises aplurality of level sensors arranged along a first axis substantiallyperpendicular to a second axis in which the strip extends, and each ofthe level sensors comprises an emitter and a detector, wherein each ofthe first and second exposure fields includes a second length measuredalong the second axis, and the emitter and the detector are spaced by asecond distance no greater than the second length.
 20. The semiconductorapparatus of claim 17, wherein the level sensor device comprises aplurality of level sensors, and the plurality of level sensors comprisesrespective emitters and detectors, wherein the emitters of the levelsensors are arranged in a staggered manner, and the detectors of thelevel sensors are arranged in a staggered manner.